NTE129 PNP Transistor

The NTE129 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NTE129 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NTE129 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NTE129 transistor as follows.

NTE129 Transistor Specification

Transistor Code		NTE129
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO39
Collector Power Dissipation (Maximum)	PC	1.25W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	100MHz
Collector Capacitance	CC	20pF

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