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NTE128 NPN Transistor

The NTE128 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NTE128 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NTE128 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NTE128 transistor as follows.

Circuit diagram symbol of the NTE128 transistor

NTE128 Transistor Specification

Transistor Code NTE128
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO39
Collector Power Dissipation (Maximum) PC 0.8W
Collector-Base Voltage (Maximum) VCB 140V
Collector-Emitter Voltage (Maximum) VCE 80V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 7V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 100MHz
Collector Capacitance CC 12pF

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