NSVT3904DP6T5G NPN Transistor

The NSVT3904DP6T5G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NSVT3904DP6T5G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSVT3904DP6T5G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NSVT3904DP6T5G transistor as follows.

NSVT3904DP6T5G Transistor Specification

Transistor Code		NSVT3904DP6T5G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT963
Transistor SMD Code		E
Collector Power Dissipation (Maximum)	PC	0.42W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	200MHz
Collector Capacitance	CC	4pF

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