NSVMMBTA05LT1G NPN Transistor

The NSVMMBTA05LT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NSVMMBTA05LT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSVMMBTA05LT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NSVMMBTA05LT1G transistor as follows.

NSVMMBTA05LT1G Transistor Specification

Transistor Code		NSVMMBTA05LT1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		1H
Collector Power Dissipation (Maximum)	PC	0.23W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	100MHz

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