NSVMMBT6520LT1G PNP Transistor

The NSVMMBT6520LT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSVMMBT6520LT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSVMMBT6520LT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NSVMMBT6520LT1G transistor as follows.

NSVMMBT6520LT1G Transistor Specification

Transistor Code		NSVMMBT6520LT1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		2Z
Collector Power Dissipation (Maximum)	PC	0.23W
Collector-Base Voltage (Maximum)	VCB	350V
Collector-Emitter Voltage (Maximum)	VCE	350V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	40MHz
Collector Capacitance	CC	6pF

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