NSVMMBT5087LT1G PNP Transistor

The NSVMMBT5087LT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSVMMBT5087LT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSVMMBT5087LT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NSVMMBT5087LT1G transistor as follows.

NSVMMBT5087LT1G Transistor Specification

Transistor Code		NSVMMBT5087LT1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		2Q
Collector Power Dissipation (Maximum)	PC	0.25W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.05A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		250
Transition Frequency	FT	40MHz
Collector Capacitance	CC	4pF

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