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NSVMMBT2222ATT1G NPN Transistor

The NSVMMBT2222ATT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NSVMMBT2222ATT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSVMMBT2222ATT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NSVMMBT2222ATT1G transistor as follows.

Circuit diagram symbol of the NSVMMBT2222ATT1G transistor

NSVMMBT2222ATT1G Transistor Specification

Transistor Code NSVMMBT2222ATT1G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT416
Transistor SMD Code 1P
Collector Power Dissipation (Maximum) PC 0.15W
Collector-Base Voltage (Maximum) VCB 75V
Collector-Emitter Voltage (Maximum) VCE 40V
Collector Current (Maximum) IC 0.6A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 300MHz
Collector Capacitance CC 8pF

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