NSVEMX1DXV6T1G NPN Transistor

The NSVEMX1DXV6T1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NSVEMX1DXV6T1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSVEMX1DXV6T1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NSVEMX1DXV6T1G transistor as follows.

NSVEMX1DXV6T1G Transistor Specification

Transistor Code		NSVEMX1DXV6T1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT563
Transistor SMD Code		3X
Collector Power Dissipation (Maximum)	PC	0.36W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	180MHz
Collector Capacitance	CC	2pF

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