NSVBSS63LT1G PNP Transistor

The NSVBSS63LT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSVBSS63LT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSVBSS63LT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NSVBSS63LT1G transistor as follows.

NSVBSS63LT1G Transistor Specification

Transistor Code		NSVBSS63LT1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		BM
Collector Power Dissipation (Maximum)	PC	0.225W
Collector-Base Voltage (Maximum)	VCB	110V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	50MHz
Collector Capacitance	CC	20pF

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