NSVBCP69T1G PNP Transistor

The NSVBCP69T1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSVBCP69T1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSVBCP69T1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NSVBCP69T1G transistor as follows.

NSVBCP69T1G Transistor Specification

Transistor Code		NSVBCP69T1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT223
Transistor SMD Code		CE
Collector Power Dissipation (Maximum)	PC	1.5W
Collector-Base Voltage (Maximum)	VCB	25V
Collector-Emitter Voltage (Maximum)	VCE	20V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		85
Transition Frequency	FT	60MHz

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