NSVBC858CLT1G PNP Transistor

The NSVBC858CLT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSVBC858CLT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSVBC858CLT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NSVBC858CLT1G transistor as follows.

NSVBC858CLT1G Transistor Specification

Transistor Code		NSVBC858CLT1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		3L
Collector Power Dissipation (Maximum)	PC	0.23W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		420
Transition Frequency	FT	100MHz
Collector Capacitance	CC	4.5pF

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