NSVBC850CLT1G NPN Transistor

The NSVBC850CLT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NSVBC850CLT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSVBC850CLT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NSVBC850CLT1G transistor as follows.

NSVBC850CLT1G Transistor Specification

Transistor Code		NSVBC850CLT1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		2G
Collector Power Dissipation (Maximum)	PC	0.23W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	45V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		420
Transition Frequency	FT	100MHz
Collector Capacitance	CC	4.5pF

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