NSVBC848CLT1G NPN Transistor

The NSVBC848CLT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NSVBC848CLT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSVBC848CLT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NSVBC848CLT1G transistor as follows.

NSVBC848CLT1G Transistor Specification

Transistor Code		NSVBC848CLT1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		1L
Collector Power Dissipation (Maximum)	PC	0.23W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		420
Transition Frequency	FT	100MHz
Collector Capacitance	CC	4.5pF

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