NSVBC847BTT1G NPN Transistor

The NSVBC847BTT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NSVBC847BTT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSVBC847BTT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NSVBC847BTT1G transistor as follows.

NSVBC847BTT1G Transistor Specification

Transistor Code		NSVBC847BTT1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT416
Transistor SMD Code		1F
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	45V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	100MHz
Collector Capacitance	CC	4.5pF

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