NSVBC847BDW1T2G NPN Transistor

The NSVBC847BDW1T2G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NSVBC847BDW1T2G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSVBC847BDW1T2G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NSVBC847BDW1T2G transistor as follows.

NSVBC847BDW1T2G Transistor Specification

Transistor Code		NSVBC847BDW1T2G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT363
Transistor SMD Code		1F
Collector Power Dissipation (Maximum)	PC	0.38W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	45V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	100MHz
Collector Capacitance	CC	4.5pF

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