NSV60601MZ4T1G NPN Transistor

The NSV60601MZ4T1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NSV60601MZ4T1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSV60601MZ4T1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NSV60601MZ4T1G transistor as follows.

NSV60601MZ4T1G Transistor Specification

Transistor Code		NSV60601MZ4T1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT223
Transistor SMD Code		60601
Collector Power Dissipation (Maximum)	PC	2W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	100MHz
Collector Capacitance	CC	37pF

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