NSV60600MZ4T1G PNP Transistor

The NSV60600MZ4T1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSV60600MZ4T1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSV60600MZ4T1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NSV60600MZ4T1G transistor as follows.

NSV60600MZ4T1G Transistor Specification

Transistor Code		NSV60600MZ4T1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT223
Transistor SMD Code		60600
Collector Power Dissipation (Maximum)	PC	2W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		70
Transition Frequency	FT	100MHz
Collector Capacitance	CC	60pF

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