NSV60200LT1G PNP Transistor

The NSV60200LT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSV60200LT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSV60200LT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NSV60200LT1G transistor as follows.

NSV60200LT1G Transistor Specification

Transistor Code		NSV60200LT1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		VG
Collector Power Dissipation (Maximum)	PC	0.54W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		150
Transition Frequency	FT	100MHz
Collector Capacitance	CC	62pF

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