The NSV40301MDR2G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NSV40301MDR2G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The NSV40301MDR2G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.
Circuit diagram symbol of the NSV40301MDR2G transistor as follows.
| Transistor Code | NSV40301MDR2G | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | NPN | |
| Transistor Material | Silicon(SI) | |
| Package | SOIC8 | |
| Transistor SMD Code | N40301 | |
| Collector Power Dissipation (Maximum) | PC | 0.58W |
| Collector-Base Voltage (Maximum) | VCB | 40V |
| Collector-Emitter Voltage (Maximum) | VCE | 40V |
| Collector Current (Maximum) | IC | 3A |
| Operating Junction Temperature (Maximum) | TJ | 150°C |
| Emitter-Base Voltage (Maximum) | VEB | 6V |
| Forward Current Transfer Ratio (hFE Value) | 200 | |
| Transition Frequency | FT | 100MHz |
| Collector Capacitance | CC | 40pF |
UXPython is not the creator or an official representative of the NSV40301MDR2G NPN transistor. You can download the official NSV40301MDR2G NPN transistor datasheet to get more infromation about this transistor.
Note : Copyrighted materials belong to their creator or official representative.
NSS40301MDR2G NPN Transistor
NSS40300DDR2G PNP Transistor
NSS40300MDR2G PNP Transistor
NSV40300MDR2G PNP Transistor
Copyright © UXPython inc. All rights reserved.
Devoloped by UXPython.