The NSV40200UW6T1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSV40200UW6T1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The NSV40200UW6T1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.
Circuit diagram symbol of the NSV40200UW6T1G transistor as follows.
| Transistor Code | NSV40200UW6T1G | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | PNP | |
| Transistor Material | Silicon(SI) | |
| Package | WDFN6 | |
| Transistor SMD Code | VA | |
| Collector Power Dissipation (Maximum) | PC | 1.5W |
| Collector-Base Voltage (Maximum) | VCB | 40V |
| Collector-Emitter Voltage (Maximum) | VCE | 40V |
| Collector Current (Maximum) | IC | 2A |
| Operating Junction Temperature (Maximum) | TJ | 150°C |
| Emitter-Base Voltage (Maximum) | VEB | 7V |
| Forward Current Transfer Ratio (hFE Value) | 150 | |
| Transition Frequency | FT | 140MHz |
| Collector Capacitance | CC | 100pF |
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