NSV20201LT1G NPN Transistor

The NSV20201LT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NSV20201LT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSV20201LT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NSV20201LT1G transistor as follows.

NSV20201LT1G Transistor Specification

Transistor Code		NSV20201LT1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		VD
Collector Power Dissipation (Maximum)	PC	0.54W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	20V
Collector Current (Maximum)	IC	2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	150MHz
Collector Capacitance	CC	45pF

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