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NSV20101JT1G NPN Transistor

The NSV20101JT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NSV20101JT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSV20101JT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NSV20101JT1G transistor as follows.

Circuit diagram symbol of the NSV20101JT1G transistor

NSV20101JT1G Transistor Specification

Transistor Code NSV20101JT1G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT490
Transistor SMD Code AA
Collector Power Dissipation (Maximum) PC 0.26W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 200
Transition Frequency FT 350MHz
Collector Capacitance CC 6pF

UXPython is not the creator or an official representative of the NSV20101JT1G NPN transistor. You can download the official NSV20101JT1G NPN transistor datasheet to get more infromation about this transistor.

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More Transistors Datasheets in SOT490 Package