NSV1C300ET4G PNP Transistor

The NSV1C300ET4G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSV1C300ET4G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSV1C300ET4G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NSV1C300ET4G transistor as follows.

NSV1C300ET4G Transistor Specification

Transistor Code		NSV1C300ET4G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO252
Transistor SMD Code		1C30E
Collector Power Dissipation (Maximum)	PC	33W
Collector-Base Voltage (Maximum)	VCB	140V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	100MHz
Collector Capacitance	CC	60pF

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