NSV1C200LT1G PNP Transistor

The NSV1C200LT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSV1C200LT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSV1C200LT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NSV1C200LT1G transistor as follows.

NSV1C200LT1G Transistor Specification

Transistor Code		NSV1C200LT1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		VL
Collector Power Dissipation (Maximum)	PC	0.71W
Collector-Base Voltage (Maximum)	VCB	140V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	120MHz
Collector Capacitance	CC	22pF

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