NSV12100XV6T1G PNP Transistor

The NSV12100XV6T1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSV12100XV6T1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSV12100XV6T1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NSV12100XV6T1G transistor as follows.

NSV12100XV6T1G Transistor Specification

Transistor Code		NSV12100XV6T1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT563
Transistor SMD Code		VE
Collector Power Dissipation (Maximum)	PC	0.65W
Collector-Base Voltage (Maximum)	VCB	12V
Collector-Emitter Voltage (Maximum)	VCE	12V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		100
Collector Capacitance	CC	20pF

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