NST857BDP6T5G PNP Transistor

The NST857BDP6T5G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NST857BDP6T5G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NST857BDP6T5G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NST857BDP6T5G transistor as follows.

NST857BDP6T5G Transistor Specification

Transistor Code		NST857BDP6T5G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT963
Transistor SMD Code		K
Collector Power Dissipation (Maximum)	PC	420W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	45V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		220
Transition Frequency	FT	100MHz
Collector Capacitance	CC	4.5pF

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