NST65010M PNP Transistor

The NST65010M is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NST65010M transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NST65010M transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NST65010M transistor as follows.

NST65010M Transistor Specification

Transistor Code		NST65010M
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT363
Transistor SMD Code		4G
Collector Power Dissipation (Maximum)	PC	0.38W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	65V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		220
Transition Frequency	FT	100MHz
Collector Capacitance	CC	4.5pF

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