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NST489AMT1G NPN Transistor

The NST489AMT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NST489AMT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NST489AMT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NST489AMT1G transistor as follows.

Circuit diagram symbol of the NST489AMT1G transistor

NST489AMT1G Transistor Specification

Transistor Code NST489AMT1G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT457
Transistor SMD Code N2
Collector Power Dissipation (Maximum) PC 0.54W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 30V
Collector Current (Maximum) IC 2A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 200
Transition Frequency FT 200MHz
Collector Capacitance CC 15pF

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