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NSS40300MDR2G PNP Transistor

The NSS40300MDR2G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSS40300MDR2G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSS40300MDR2G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NSS40300MDR2G transistor as follows.

Circuit diagram symbol of the NSS40300MDR2G transistor

NSS40300MDR2G Transistor Specification

Transistor Code NSS40300MDR2G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOIC8
Transistor SMD Code P40300
Collector Power Dissipation (Maximum) PC 0.58W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 40V
Collector Current (Maximum) IC 3A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 7V
Forward Current Transfer Ratio (hFE Value) 220
Transition Frequency FT 100MHz
Collector Capacitance CC 50pF

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More Transistors Datasheets in SOIC8 Package

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