free stats

NSS40300DDR2G PNP Transistor

The NSS40300DDR2G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSS40300DDR2G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSS40300DDR2G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NSS40300DDR2G transistor as follows.

Circuit diagram symbol of the NSS40300DDR2G transistor

NSS40300DDR2G Transistor Specification

Transistor Code NSS40300DDR2G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOIC8
Transistor SMD Code 40300
Collector Power Dissipation (Maximum) PC 0.58W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 40V
Collector Current (Maximum) IC 3A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 7V
Forward Current Transfer Ratio (hFE Value) 150
Transition Frequency FT 100MHz
Collector Capacitance CC 50pF

UXPython is not the creator or an official representative of the NSS40300DDR2G PNP transistor. You can download the official NSS40300DDR2G PNP transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in SOIC8 Package

NSS40301MDR2G NSS40301MDR2G NPN Transistor NSS40300MDR2G NSS40300MDR2G PNP Transistor NSV40301MDR2G NSV40301MDR2G NPN Transistor NSV40300MDR2G NSV40300MDR2G PNP Transistor