The NSS35200MR6T1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSS35200MR6T1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The NSS35200MR6T1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.
Circuit diagram symbol of the NSS35200MR6T1G transistor as follows.
| Transistor Code | NSS35200MR6T1G | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | PNP | |
| Transistor Material | Silicon(SI) | |
| Package | TSOP-6 | |
| Collector Power Dissipation (Maximum) | PC | 1.75W |
| Collector-Emitter Voltage (Maximum) | VCE | 35V |
| Collector Current (Maximum) | IC | 5A |
| Forward Current Transfer Ratio (hFE Value) | 100 | |
| Transition Frequency | FT | 100MHz |
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