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NSS35200CF8T1G PNP Transistor

The NSS35200CF8T1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSS35200CF8T1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSS35200CF8T1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NSS35200CF8T1G transistor as follows.

Circuit diagram symbol of the NSS35200CF8T1G transistor

NSS35200CF8T1G Transistor Specification

Transistor Code NSS35200CF8T1G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package CHIPFET-8
Collector Power Dissipation (Maximum) PC 2.75W
Collector-Emitter Voltage (Maximum) VCE 35V
Collector Current (Maximum) IC 7A
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 100MHz

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