The NSS20201MR6T1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NSS20201MR6T1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The NSS20201MR6T1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.
Circuit diagram symbol of the NSS20201MR6T1G transistor as follows.
| Transistor Code | NSS20201MR6T1G | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | NPN | |
| Transistor Material | Silicon(SI) | |
| Package | TSOP-6 | |
| Collector Power Dissipation (Maximum) | PC | 1.75W |
| Collector-Emitter Voltage (Maximum) | VCE | 20V |
| Collector Current (Maximum) | IC | 3A |
| Forward Current Transfer Ratio (hFE Value) | 300 | |
| Transition Frequency | FT | 200MHz |
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