The NSS20201MR6T1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NSS20201MR6T1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The NSS20201MR6T1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.
Circuit diagram symbol of the NSS20201MR6T1G transistor as follows.
| Transistor Code | NSS20201MR6T1G | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | NPN | |
| Transistor Material | Silicon(SI) | |
| Package | TSOP-6 | |
| Collector Power Dissipation (Maximum) | PC | 1.75W |
| Collector-Emitter Voltage (Maximum) | VCE | 20V |
| Collector Current (Maximum) | IC | 3A |
| Forward Current Transfer Ratio (hFE Value) | 300 | |
| Transition Frequency | FT | 200MHz |
UXPython is not the creator or an official representative of the NSS20201MR6T1G NPN transistor. You can download the official NSS20201MR6T1G NPN transistor datasheet to get more infromation about this transistor.
Note : Copyrighted materials belong to their creator or official representative.
NSS30201MR6T1G NPN Transistor
NSS20300MR6T1G PNP Transistor
MBT35200 PNP Transistor
NSS35200MR6T1G PNP Transistor
NST489 NPN Transistor
Copyright © UXPython inc. All rights reserved.
Devoloped by UXPython.