NSS20101JT1G NPN Transistor

The NSS20101JT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NSS20101JT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSS20101JT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NSS20101JT1G transistor as follows.

NSS20101JT1G Transistor Specification

Transistor Code		NSS20101JT1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SC89
Collector Power Dissipation (Maximum)	PC	0.255W
Collector-Emitter Voltage (Maximum)	VCE	20V
Collector Current (Maximum)	IC	1A
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	350MHz

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