NSS20101J NPN Transistor

The NSS20101J is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NSS20101J transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSS20101J transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NSS20101J transistor as follows.

NSS20101J Transistor Specification

Transistor Code		NSS20101J
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SC89
Transistor SMD Code		AA
Collector Power Dissipation (Maximum)	PC	0.26W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	20V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	350MHz
Collector Capacitance	CC	6pF

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