NSS12200W PNP Transistor

The NSS12200W is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSS12200W transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSS12200W transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NSS12200W transistor as follows.

NSS12200W Transistor Specification

Transistor Code		NSS12200W
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT363
Transistor SMD Code		V2
Collector Power Dissipation (Maximum)	PC	0.45W
Collector-Base Voltage (Maximum)	VCB	12V
Collector-Emitter Voltage (Maximum)	VCE	12V
Collector Current (Maximum)	IC	2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	100MHz
Collector Capacitance	CC	50pF

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