NSS12200LT1G PNP Transistor

The NSS12200LT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSS12200LT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSS12200LT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NSS12200LT1G transistor as follows.

NSS12200LT1G Transistor Specification

Transistor Code		NSS12200LT1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		VE
Collector Power Dissipation (Maximum)	PC	0.71W
Collector-Base Voltage (Maximum)	VCB	12V
Collector-Emitter Voltage (Maximum)	VCE	12V
Collector Current (Maximum)	IC	2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		250
Transition Frequency	FT	100MHz
Collector Capacitance	CC	120pF

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