NSS12100M3 PNP Transistor

The NSS12100M3 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSS12100M3 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSS12100M3 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NSS12100M3 transistor as follows.

NSS12100M3 Transistor Specification

Transistor Code		NSS12100M3
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT723
Transistor SMD Code		VE
Collector Power Dissipation (Maximum)	PC	0.48W
Collector-Base Voltage (Maximum)	VCB	12V
Collector-Emitter Voltage (Maximum)	VCE	12V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		120
Collector Capacitance	CC	15pF

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