The NSM80100MT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSM80100MT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The NSM80100MT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.
Circuit diagram symbol of the NSM80100MT1G transistor as follows.
| Transistor Code | NSM80100MT1G | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | PNP | |
| Transistor Material | Silicon(SI) | |
| Package | SOT26 SOT457 | |
| Transistor SMD Code | 3PN | |
| Collector Power Dissipation (Maximum) | PC | 0.27W |
| Collector-Base Voltage (Maximum) | VCB | 80V |
| Collector-Emitter Voltage (Maximum) | VCE | 80V |
| Collector Current (Maximum) | IC | 0.5A |
| Operating Junction Temperature (Maximum) | TJ | 150°C |
| Emitter-Base Voltage (Maximum) | VEB | 4V |
| Forward Current Transfer Ratio (hFE Value) | 120 | |
| Transition Frequency | FT | 150MHz |
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NSM80101MT1G NPN Transistor
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