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NSL12AWT1G PNP Transistor

The NSL12AWT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSL12AWT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSL12AWT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NSL12AWT1G transistor as follows.

Circuit diagram symbol of the NSL12AWT1G transistor

NSL12AWT1G Transistor Specification

Transistor Code NSL12AWT1G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT363
Transistor SMD Code 11
Collector Power Dissipation (Maximum) PC 0.45W
Collector-Base Voltage (Maximum) VCB 12V
Collector-Emitter Voltage (Maximum) VCE 12V
Collector Current (Maximum) IC 2A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 100MHz
Collector Capacitance CC 50pF

UXPython is not the creator or an official representative of the NSL12AWT1G PNP transistor. You can download the official NSL12AWT1G PNP transistor datasheet to get more infromation about this transistor.

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