NSL12AWT1G PNP Transistor

The NSL12AWT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NSL12AWT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSL12AWT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NSL12AWT1G transistor as follows.

NSL12AWT1G Transistor Specification

Transistor Code		NSL12AWT1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT363
Transistor SMD Code		11
Collector Power Dissipation (Maximum)	PC	0.45W
Collector-Base Voltage (Maximum)	VCB	12V
Collector-Emitter Voltage (Maximum)	VCE	12V
Collector Current (Maximum)	IC	2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	100MHz
Collector Capacitance	CC	50pF

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