NSD135 NPN Transistor

The NSD135 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NSD135 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSD135 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NSD135 transistor as follows.

NSD135 Transistor Specification

Transistor Code		NSD135
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO202
Collector Power Dissipation (Maximum)	PC	1.75W
Collector-Base Voltage (Maximum)	VCB	375V
Collector-Emitter Voltage (Maximum)	VCE	375V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		30
Collector Capacitance	CC	3pF

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