NJVNJD35N04G NPN Transistor

The NJVNJD35N04G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NJVNJD35N04G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NJVNJD35N04G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NJVNJD35N04G transistor as follows.

NJVNJD35N04G Transistor Specification

Transistor Code		NJVNJD35N04G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO252
Transistor SMD Code		NJD35N04
Collector Power Dissipation (Maximum)	PC	45W
Collector-Base Voltage (Maximum)	VCB	700V
Collector-Emitter Voltage (Maximum)	VCE	350V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		2000
Transition Frequency	FT	90MHz
Collector Capacitance	CC	60pF

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