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NJVNJD35N04G NPN Transistor

The NJVNJD35N04G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NJVNJD35N04G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NJVNJD35N04G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NJVNJD35N04G transistor as follows.

Circuit diagram symbol of the NJVNJD35N04G transistor

NJVNJD35N04G Transistor Specification

Transistor Code NJVNJD35N04G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO252
Transistor SMD Code NJD35N04
Collector Power Dissipation (Maximum) PC 45W
Collector-Base Voltage (Maximum) VCB 700V
Collector-Emitter Voltage (Maximum) VCE 350V
Collector Current (Maximum) IC 4A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 2000
Transition Frequency FT 90MHz
Collector Capacitance CC 60pF

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