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NJVMJD45H11T4G PNP Transistor

The NJVMJD45H11T4G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NJVMJD45H11T4G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NJVMJD45H11T4G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NJVMJD45H11T4G transistor as follows.

Circuit diagram symbol of the NJVMJD45H11T4G transistor

NJVMJD45H11T4G Transistor Specification

Transistor Code NJVMJD45H11T4G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO252
Transistor SMD Code J45H11
Collector Power Dissipation (Maximum) PC 20W
Collector-Base Voltage (Maximum) VCB 80V
Collector-Emitter Voltage (Maximum) VCE 80V
Collector Current (Maximum) IC 8A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 90MHz
Collector Capacitance CC 130pF

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