NJVMJD32CT4G PNP Transistor

The NJVMJD32CT4G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NJVMJD32CT4G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NJVMJD32CT4G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NJVMJD32CT4G transistor as follows.

NJVMJD32CT4G Transistor Specification

Transistor Code		NJVMJD32CT4G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO252
Transistor SMD Code		J32C
Collector Power Dissipation (Maximum)	PC	15W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	3MHz

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