NJVMJD31CT4G NPN Transistor

The NJVMJD31CT4G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NJVMJD31CT4G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NJVMJD31CT4G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NJVMJD31CT4G transistor as follows.

NJVMJD31CT4G Transistor Specification

Transistor Code		NJVMJD31CT4G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO252
Transistor SMD Code		J31C
Collector Power Dissipation (Maximum)	PC	15W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	3MHz

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