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NJVMJD243T4G NPN Transistor

The NJVMJD243T4G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NJVMJD243T4G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NJVMJD243T4G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NJVMJD243T4G transistor as follows.

Circuit diagram symbol of the NJVMJD243T4G transistor

NJVMJD243T4G Transistor Specification

Transistor Code NJVMJD243T4G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO252
Transistor SMD Code J243
Collector Power Dissipation (Maximum) PC 12.5W
Collector-Base Voltage (Maximum) VCB 100V
Collector-Emitter Voltage (Maximum) VCE 100V
Collector Current (Maximum) IC 4A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 7V
Forward Current Transfer Ratio (hFE Value) 15
Transition Frequency FT 40MHz
Collector Capacitance CC 50pF

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