NJVMJD210T4G PNP Transistor

The NJVMJD210T4G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NJVMJD210T4G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NJVMJD210T4G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NJVMJD210T4G transistor as follows.

NJVMJD210T4G Transistor Specification

Transistor Code		NJVMJD210T4G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO252
Transistor SMD Code		J210
Collector Power Dissipation (Maximum)	PC	12.5W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	65MHz

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