NJVMJB45H11T4G PNP Transistor

The NJVMJB45H11T4G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NJVMJB45H11T4G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NJVMJB45H11T4G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NJVMJB45H11T4G transistor as follows.

NJVMJB45H11T4G Transistor Specification

Transistor Code		NJVMJB45H11T4G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO263
Transistor SMD Code		B45H11
Collector Power Dissipation (Maximum)	PC	50W
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	40MHz
Collector Capacitance	CC	230pF

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