NJVMJB44H11T4G NPN Transistor

The NJVMJB44H11T4G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NJVMJB44H11T4G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NJVMJB44H11T4G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NJVMJB44H11T4G transistor as follows.

NJVMJB44H11T4G Transistor Specification

Transistor Code		NJVMJB44H11T4G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO263
Transistor SMD Code		B44H11
Collector Power Dissipation (Maximum)	PC	50W
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	50MHz
Collector Capacitance	CC	130pF

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