NJVBUB323ZT4G NPN Transistor

The NJVBUB323ZT4G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NJVBUB323ZT4G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NJVBUB323ZT4G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NJVBUB323ZT4G transistor as follows.

NJVBUB323ZT4G Transistor Specification

Transistor Code		NJVBUB323ZT4G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO263
Transistor SMD Code		BUB323Z
Collector Power Dissipation (Maximum)	PC	150W
Collector-Base Voltage (Maximum)	VCB	350V
Collector-Emitter Voltage (Maximum)	VCE	350V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		500
Transition Frequency	FT	2MHz
Collector Capacitance	CC	200pF

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